▎ 摘　　要

NOVELTY - Preparation of two-dimensional planar heterojunction enhanced field effect transistor involves growing monolayer (MX2) or less layer material between adjacent graphene strips or blocks by chemical vapor deposition, forming graphene-MX2-graphene in-plane heterojunction layer between graphene strip or block, carrying out spin photoresist on heterojunction layer of graphene-MX2-graphene, transferring pattern on mask to photoresist by exposure, and depositing titanium/gold electrode on graphene on both sides of graphene-MX2-graphene heterojunction layer by electron beam evaporation. USE - Preparation of two-dimensional planar heterojunction enhanced field effect transistor. ADVANTAGE - The method efficiently provides two-dimensional planar heterojunction enhanced field effect transistor having high on/off ratio and reduced dark current. DETAILED DESCRIPTION - Preparation of two-dimensional planar heterojunction enhanced field effect transistor involves growing graphene film on a copper foil by chemical vapor deposition method, transferring to monocrystalline silicon wafer substrate with oxide layer, uniformly spin-coating photoresist on transferred graphene film, transferring the pattern on the mask plate to photoresist by exposure, etching non-patterned portions using a plasma etcher, etching graphene film into preset shape and spacing of graphene strips or blocks such that the length and width of graphene strips or blocks are 2-60 mu m and distance between graphene strips or blocks is 5-30 mu m, processing the photoresist, using substrate with graphene strips or blocks as substrate for growth, growing monolayer or less layer material between adjacent graphene strips or blocks by chemical vapor deposition, forming graphene-MX2-graphene in-plane heterojunction layer between graphene strip or block, carrying out spin photoresist on heterojunction layer of graphene-MX2-graphene, transferring pattern on mask to photoresist by exposure, and depositing titanium/gold electrode on graphene on both sides of graphene-MX2-graphene heterojunction layer by electron beam evaporation.