▎ 摘　　要

NOVELTY - A light emitting diode (40) comprises: semiconductor epitaxial layer, where the semiconductor epitaxial layer contains first semiconductor layer (120), an active layer (130), and a second semiconductor layer (140), and the active layer is between the first and the second semiconductor layer; a first electrode (150) on and electrically connected with the second semiconductor layer; a second electrode (160) on and electrically connected with the first semiconductor layer; and a graphene layer (110) on at least one of the first semiconductor layer and the second semiconductor layer USE - As a light emitting diode (claimed), which is useful for converting electrical energy into light; and as light sources in optical imaging systems, such as displays, and projectors. ADVANTAGE - The light emitting diode (LED) has higher energy conversion efficiency, higher radiance (i.e. the LED emits a larger quantity of light per unit area), longer lifetime, higher response speed, and better reliability, as compared to conventional light sources; and generates less heat. DETAILED DESCRIPTION - A light emitting diode (40) comprises: semiconductor epitaxial layer, where the semiconductor epitaxial layer contains first semiconductor layer (120), an active layer (130), and a second semiconductor layer (140), and the active layer is between the first and the second semiconductor layer; a first electrode (150) on and electrically connected with the second semiconductor layer; a second electrode (160) on and electrically connected with the first semiconductor layer; and a graphene layer (110) on at least one of the first semiconductor layer and the second semiconductor layer. The graphene layer comprises a graphene film consisting of a single layer of continuous carbon atoms. The epitaxial structure further comprises reflection layer on the first electrode. DESCRIPTION OF DRAWING(S) - The figure shows schematic view of the light emitting diode (LED). Light emitting diode (40) Graphene layer (110) First semiconductor layer (120) Chamber (124) Active layer (130) Second semiconductor layer (140) First electrode (150) Second electrode (160)