▎ 摘　　要

NOVELTY - Graphene nanomesh comprises a sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width. USE - The graphene nanomesh is useful for forming transistor, sensor, and graphene structure (all claimed). DETAILED DESCRIPTION - INDEPENDENT CLAIMS are: (1) a method of forming graphene nanomesh comprising: providing a sheet of graphene; forming a block copolymer thin film on the graphene; selectively removing a block copolymer domain from the thin film so as to form a mask containing apertures in the thin film; and etching away regions of the graphene exposed by the mask so as to form apertures in the sheet of graphene; (2) a transistor comprising a source electrode, a drain electrode, a gate electrode, and a channel region comprising the graphene nanomesh; (3) a sensor comprising a source electrode, a drain electrode, a gate electrode, and a channel region comprising the graphene nanomesh, and further comprising a biomolecule immobilized to the surface of the graphene nanomesh, the biomolecule configured to bind to a target; (4) a method of forming a graphene structure comprising providing a sheet of graphene on a substrate; forming a thin layer of evaporated SiOx on the graphene; forming a thin film of block copolymer poly(styrene-block-methyl methacrylate) on the graphene; annealing the thin film of block copolymer poly(styrene-block-methyl methacrylate); developing the thin film of block copolymer poly(styrene-block-methyl methacrylate) so as to form a polystyrene mask containing apertures in the thin film; forming a SiOx hard mask over the graphene by reactive ion etching; etching away exposed regions of the graphene with oxygen (O2) plasma so as to form apertures in the sheet of graphene; and removing the SiOx hard mask by exposing the hard mask to hydrofluoric acid, thus forming a graphene structure having holes; and (5) a graphene structure comprising a sheet of graphene having an array of periodically arranged holes in the surface.