▎ 摘　　要

NOVELTY - The method involves providing a semiconductor substrate with multiple fin shape structures. An upper part of multiple fin shape structures are formed with on a source or leakage area. A sample grade unit of a sample stacking structure is determined. Source or leakage area epitaxy growth stress rate is determined according to constructing process. An adjacent fin shape structure is formed with a forming hole that is filled with oxidation graphene material. The sample grade of a sample stacking structure is removed. A medium layer cover surface is formed with an oxidation graphite alkene layer. USE - FinFET device manufacturing method. ADVANTAGE - The method enables improving graphene filling ability and avoiding filling capacity insufficient rate and reducing time consumption rate and fin structure hole defects and increasing device performance yield rate. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a FinFET device.