▎ 摘　　要

NOVELTY - The device has an N-type emitter (101) adjacent to a first side of a graphene material base layer (103) and forming an emitter/base interface. An N-type collector (105) is adjacent to a second side of the graphene material base layer opposite to the first side, and forms a collector/ base interface. A set of electrodes is connected to and forms a separate electrical connection with the emitter, a collector and a base. An emitter transition layer (102) provides an insulating tunnel injection structure placed at the emitter interface with the material base layer i.e. emitter/base interface. USE - Three-terminal junction transistor device for use in digital circuits, analog-to-digital converters, digital-to-analog converters, mixed-signal circuit, fiber-optic receivers and microwave amplifiers. ADVANTAGE - The device provides wide bandgap nature of Aluminum-Gallium-Nitrogen, Gallium-Nitrogen, IndiumAluminumNitrogen and Gallium-Nitrogen, so that a graphene base transistor allows high temperature operation, and the enhanced lateral thermal conductivity of graphene can spread a thermal load to a larger area, thus reducing thermal resistance, and reducing power dissipation within the device in an effective manner. The graphene for the base layer of the transistor can allow wide bandgap materials such as Aluminum-Gallium-Nitrogen, Gallium-Nitrogen, IndiumAluminumNitrogen and Silicon carbide to be used as collector layer material of the transistors, so that the Aluminum-Gallium-Nitrogen, Gallium-Nitrogen, IndiumAluminumNitrogen and Silicon carbide have extremely high Johnson figure of merit, thus providing the graphene base transistor with high power and high frequency operation. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a transistor with a graphene base. Graphene material base layer terminal (Vb) Collector electrode (Vc) Emitter electrode (Ve) N-type emitter (101) Emitter transition layer (102) Graphene material base layer (103) Collector transition layer (104) N-type collector (105)