• 专利标题:   Method of manufacturing EUV photomask inorganic protection film component respectively deposits a silicon nitride layer on two surfaces of a graphene layer.
  • 专利号:   TW201723640-A, TW571698-B1
  • 发明人:   WANG C
  • 专利权人:   MICRO LITHOGRAPHY INC
  • 国际专利分类:   G03F001/22, G03F001/62
  • 专利详细信息:   TW201723640-A 01 Jul 2017 G03F-001/22 201801 Chinese
  • 申请详细信息:   TW201723640-A TW143475 23 Dec 2015
  • 优先权号:   TW143475

▎ 摘  要

NOVELTY - A method of manufacturing EUV photomask inorganic protection film component comprises steps of: obtaining a copper foil, the edge of the copper foil clamped by a large frame and a small frame; placing the copper foil in a quartz glass tube to be heated by methane so that a graphene layer is formed on the surface of the copper foil; clamping the large and small frames out and depositing a first silicon nitride layer on the surface of the graphene layer; forming a perfluoropolymer layer on the surface of the first silicon nitride layer; adhering a temporary frame on the surface of the perfluoropolymer layer through an organic glue; after dissolving and eliminating the copper foil by using a ferric chloride lotion, depositing a second silicon nitride layer on another surface of the graphene layer; after adhering a primary frame on another surface of the second silicon nitride layer through an inorganic glue, removing the temporary frame, and removing the perfluoropolymer layer through a perfluorinated solvent, thereby forming an EUV photomask inorganic protection film component.