• 专利标题:   Preparing high dielectric and low loss material based on synergistic effect of capacitance and inductance comprises e.g. mixing graphene and polyvinylidene fluoride, pulverizing and drying, pressing first mixed powder and forming.
  • 专利号:   CN112389038-A
  • 发明人:   FAN R, WANG Z, TIAN J, SUN K, WU X
  • 专利权人:   UNIV SHANGHAI MARITIME
  • 国际专利分类:   B32B027/14, B32B027/30, B32B037/10, B32B009/00, B32B009/04, C08K003/04, C08L027/16
  • 专利详细信息:   CN112389038-A 23 Feb 2021 B32B-009/00 202122 Pages: 8 Chinese
  • 申请详细信息:   CN112389038-A CN11155775 26 Oct 2020
  • 优先权号:   CN11155775

▎ 摘  要

NOVELTY - Preparing high dielectric and low loss material based on synergistic effect of capacitance and inductance comprises (i) mixing graphene with different mass fractions and mixing with polyvinylidene fluoride, pulverizing and drying to obtain first mixed powder and second mixed powder, where the first mixed powder has capacitance characteristics, and the mass fraction of graphene is 0-6 wt.%, and second mixed powder has inductance characteristics, and the mass fraction of graphene is 6-18 wt.%, and (ii) pressing the first mixed powder into a shape to obtain single-layer material, and(iii) pouring the second mixed powder onto the single-layer material obtained in the step (ii), pressing and forming to obtain high-dielectric and low-loss material with double-layer structure. USE - The method is useful for preparing high dielectric and low loss material based on synergistic effect of capacitance and inductance. ADVANTAGE - The material has high dielectric, and low loss; and is good for mass production. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for high-dielectric, low-loss material based on synergistic effect of capacitance and inductance.