• 专利标题:   Nano heterojunction UV detector with flexible vertical structure contains polyester film layer, indium tin oxide film anode electrode layer, nitrogen-doped graphene film layer, and aluminum cathode electrode layer.
  • 专利号:   CN110739399-A
  • 发明人:   TANG L, CAI Y, HU S, GUO Q
  • 专利权人:   KUNMING PHYSICS INST
  • 国际专利分类:   H01L051/42, H01L051/44, H01L051/46, H01L051/48
  • 专利详细信息:   CN110739399-A 31 Jan 2020 H01L-051/42 202016 Pages: 9 Chinese
  • 申请详细信息:   CN110739399-A CN11016448 24 Oct 2019
  • 优先权号:   CN11016448

▎ 摘  要

NOVELTY - A nano heterojunction UV detector with flexible vertical structure contains polyester film layer, indium tin oxide film anode electrode layer, nitrogen-doped graphene film layer having thickness of 10-40 nm, N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) thin film layer and aluminum cathode electrode layer having thickness of 80-100 nm. The polyester film layer and indium tin oxide film anode electrode layer constitute substrate. USE - Nano heterojunction UV detector with flexible vertical structure. ADVANTAGE - The detector is a photovoltaic flexible ultraviolet detector, which can work under zero bias or low voltage bias conditions, and hence the device has low power consumption and high detection rate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of nano heterojuntion UV detector, which involves sequentially transferring prepared nitrogen-doped graphene thin film layer on anode electrode layer of indium tin oxide thin film, carrying out high vacuum evaporation of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine thin film layer and aluminum cathode electrode layer.