▎ 摘　　要

NOVELTY - Memory device has a gate electrode, a gate insulating layer formed on the gate electrode, a tunneling insulating layer stacked on the gate insulating layer, a channel layer stacked on the tunneling insulating layer and a source electrode and a drain electrode formed on the channel layer to be spaced apart from each other. The tunneling insulating layer suppresses tunneling of charges from any one of the channel layer and the gate electrode by a voltage applied to each of the gate electrode and the drain electrode, and a density of tunneled charges is set according to the voltage applied to the drain electrode to output and store multiple current levels. USE - Memory device used for multi-level driving. ADVANTAGE - The memory device is quickly process a large amount of information by storing and outputting multiple current levels according to the thickness of the tunneling insulating layer, and also improves the efficiency of the device by optimizing power consumption. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a memory device. 110Gate electrode 120Gate insulating layer 140Tunneling insulating layer 150Channel layer 160Drain electrode