• 专利标题:   Preparing high stability liquid gate type graphene field effect transistor used for detecting nucleic acid molecule, involves performing hydrophobic treatment of substrate, growing graphene by vapor deposition, transferring graphene onto substrate, drying, degumming, cleaning, removing impurity.
  • 专利号:   CN115394839-A
  • 发明人:   SUN Y, LI Z
  • 专利权人:   UNIV BEIJING SCI TECHNOLOGY
  • 国际专利分类:   G01N027/414, H01L021/335, H01L029/16, H01L029/423, H01L029/772
  • 专利详细信息:   CN115394839-A 25 Nov 2022 H01L-029/16 202309 Chinese
  • 申请详细信息:   CN115394839-A CN10374093 11 Apr 2022
  • 优先权号:   CN10374093

▎ 摘  要

NOVELTY - Preparing high stability liquid gate type graphene field effect transistor involves performing hydrophobic treatment of the substrate, growing graphene by vapor deposition, transferring the graphene onto the substrate, drying, degumming, cleaning, removing impurity, setting a reaction tank above the substrate, pasting the reaction tank on top of the graphene to form a graphene field effect transistor with a reaction tank, and curing the graphene field effect transistor equipped with a reaction tank in an ultraviolet box. USE - Method for preparing high stability liquid gate type graphene field effect transistor used for detecting nucleic acid molecule (claimed). ADVANTAGE - The method uses n-octadecyltrichlorosilane (OTS) to self-assemble on a glass substrate to form a hydrophobic film, which effectively prevents the liquid in the solution environment from diffusing from the graphene surface to between the graphene and the substrate, and overcomes the problem of water film formation.