▎ 摘　　要

NOVELTY - The lamination structure has base layer whose one side is provided with a hole. A quantum dot is provided in bottom surface of the hole. A graphene layer is provided to cover the quantum dot on the base layer. An underlying layer is formed on a semiconductor layer. The semiconductor layer is made of gallium nitride semiconductor and underlying layer is made of aluminum nitride. USE - Lamination structure of light emitting device (claimed). ADVANTAGE - The spectral efficiency of the quantum dot can be enhanced and size of the device is reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing method of lamination structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the lamination structure.