▎ 摘　　要

NOVELTY - Graphene insertion layer comprises a substrate (1), a gallium nitride layer (2) arranged on the substrate, and a graphene insertion layer (3) arranged in the substrate. A barrier layer (4) arranged between the graphene insertion layers. A cap layer (5) arranged above the barrier layer. The substrate is provided with a first substrate and a second substrate. The second substrate and the third substrate are arranged in parallel. USE - GaN/AlGaN heterogeneous structure of graphene as insertion layer used in high electron mobility transistor (HEMT) device e.g. communication, electronics, radar, aerospace, national defense and military affairs. ADVANTAGE - The graphene as the insertion layer of GaN/AlGaN heterogeneous structure provides a new structure for GaN-based high mobility transistor, using graphene 0.3-1.2 nm ultra-thin thickness, and ultra-high mobility characteristics to 15000 cm2/V s, improving the mobility of two-dimensional electron gas in GaN or AlGaNheterojunction, so as to solve the problem of swing amplitude of logic voltage of the device and shorten the transmission time, and reduce the key problem of the contradiction between the switch energy, making the GaN based high mobility transistors play a significant role in the field of high frequency and high speed device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of GaN/AlGaN heterogeneous structure of graphene as an insertion layer. DESCRIPTION OF DRAWING(S) - The drawing shows a structure schematic diagram of the GaN/AlGaN heterogeneous structure of graphene as an insertion layer. 1Substrate 2Gallium nitride layer 3Graphene inserting layer 4Barrier layer 5Cap layer