▎ 摘　　要

NOVELTY - Preparing vesicle type MOF/GO material comprise (S1) using Hummers method to carry out oxidation peeling treatment on graphite to obtain the graphene oxide, (S2) dispersing the prepared graphene oxide in an aqueous solution, ultrasonically dispersing to obtain the graphene oxide dispersion, (S3) preparing an oil phase solution and an aqueous phase solution, where preparing the oil phase solution by dissolving the organic ligand in a water-insoluble organic solvent, (S4) mixing the oil phase solution and aqueous phase solution, using emulsifier to emulsify the mixed solution to obtain emulsion, (S5) adding a certain amount of organic ligand and metal salt in the step (3) to the reaction system of in the step (4), emulsifying again and (S6) heating the emulsion obtained in the step (5) to 50-60℃, maintaining for 1-2 hours, promoting the growth of MOF crystal grain and obtaining vesicle type MOF/GO material. USE - The method is useful in preparing vesicle type MOF/GO material. ADVANTAGE - The material: has excellent adsorption properties and can achieve active selective adsorption of specified components. DETAILED DESCRIPTION - Preparing vesicle type MOF/GO composites material comprise (S1) using Hummers method to carry out oxidation peeling treatment on graphite to obtain the graphene oxide, (S2) dispersing the prepared graphene oxide in an aqueous solution, ultrasonically dispersing to obtain the graphene oxide dispersion, (S3) preparing an oil phase solution and an aqueous phase solution, where preparing the oil phase solution by dissolving the organic ligand in a water-insoluble organic solvent and the aqueous solution comprises the deionized aqueous solution dissolved with the metal salt and the graphene oxide dispersion obtained in the step (2), (S4) mixing the oil phase solution and aqueous phase solution, using emulsifier to emulsify the mixed solution to obtain emulsion, heating the emulsion to 50-60℃ and maintaining for 1-2 hours to grow MOF grains on the surface of graphene oxide, (S5) adding a certain amount of organic ligand and metal salt in the step (3) to the reaction system in the step (4), emulsifying again and (S6) heating the emulsion obtained in the step (5) to 50-60℃, maintaining for 1-2 hours, promoting the growth of MOF crystal grain and obtaining vesicle type MOF/GO material. An INDEPENDENT CLAIM is also included for a vesicle-type MOF/GO material, which is prepared by above method.