▎ 摘　　要

NOVELTY - The method involves providing a metal substrate precursor, and carrying out removing impurity treatment and levelling treatment on two surface of the metal substrate precursor. The tungsten plating treatment or molybdenum plating treatment is carried out to one side surface of metal substrate precursor processed. The metal matrix precursor is annealed before or after the tungsten plating process or the molybdenum plating process, and the annealing treatment is carried out in a protective atmosphere. The material of the metal substrate precursor is made of nickel, cobalt, iron and copper. The material of the graphene base precursor is selected from rolled copper foil. USE - Method for preparing substrate for growing graphene film (claimed). ADVANTAGE - The crystal boundary of the substrate surface, the growth of the graphene, defect and wrinkles are greatly reduced. The excessive aggregation of local carbon atoms is avoided to form multilayer graphene. The diffusion of carbon in the substrate during the growth process of the graphene film has a certain barrier function, even if the carbon source is more or longer for a long time. The difficulty of the growth of the single layer graphene the film is greatly reduced. The substrate of surface tungsten plating or molybdenum plating is kept flat in the growth and cooling process, which greatly reduces the wrinkles of the graphite, and reduces the possibility of damage and pollution after transferring graphene. The quality of the graphene is improved. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a preparation method of graphene film; and (2) a graphene film. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the optical microscope photo of graphene film prepared.