• 专利标题:   Temperature sensor, comprises double-layer graphene, pair of metal electrode and substrate, where double-layer graphene is grown or placed on substrate, and double-layer graphene has overlapped stacking area.
  • 专利号:   CN110657898-A
  • 发明人:   GAO L, XU J
  • 专利权人:   UNIV NANJING
  • 国际专利分类:   G01K007/18
  • 专利详细信息:   CN110657898-A 07 Jan 2020 G01K-007/18 202011 Pages: 8 Chinese
  • 申请详细信息:   CN110657898-A CN10957146 10 Oct 2019
  • 优先权号:   CN10957146

▎ 摘  要

NOVELTY - A temperature sensor comprises a double-layer graphene, a pair of metal electrode and a substrate, where the double-layer graphene is grown or placed on the substrate, the double-layer graphene has overlapped stacking area, and double-layer graphene is respectively connected to a pair of electrodes. USE - Temperature sensor. ADVANTAGE - The temperature sensor has improved heat conduction performance and sensitivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing temperature sensor, which involves utilizing an electrodes for electron beam lithography or photolithography to produce electrodes on each end of two layers of graphene, and performing an electron beam evaporation or thermal evaporation of the desired metal electrode, preparing graphene by utilizing chemical vapor deposition method, preparing graphene by utilizing silicon carbide epitaxial method, and obtaining graphene material by peeling graphene in various ways to grow or placing on the substrate surface.