• 专利标题:   Atomic transfer of clean chemical vapor deposited graphene used for constructing electronic device, by selecting organic solvents including trifluoroacetic acid, formic acid, and/or oxalic acid to remove polymethyl methacrylate coating.
  • 专利号:   CN103449418-A
  • 发明人:   WANG D, LI J, WAN L
  • 专利权人:   CHINESE ACAD SCI CHEM INST
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103449418-A 18 Dec 2013 C01B-031/04 201417 Pages: 17 Chinese
  • 申请详细信息:   CN103449418-A CN10362356 19 Aug 2013
  • 优先权号:   CN10362356

▎ 摘  要

NOVELTY - Atomic-transfer of clean chemical vapor deposited graphene comprises selecting organic solvents comprising trifluoroacetic acid, formic acid, and/or oxalic acid, preferably acetic acid to remove polymethyl methacrylate (PMMA) coating. USE - Method for atomic transfer of clean chemical vapor deposited graphene used for constructing electronic device, particularly field effect transistors, LED, and transparent electrode for interface theory (all claimed). ADVANTAGE - The graphene has large surface area, structural integrity, fewer defects and PMMA residues. The method is easy and provides little PMMA residue.