▎ 摘　　要

NOVELTY - The method for preparing nitrogen-doped graphene by microwave plasma chemical vapor deposition involves placing phosphorus pentoxide powder in a quartz crucible, cleaning and drying silicon substrate, plating a layer of metal catalyst thin film on the silicon substrate, then placing in a deposition chamber, evacuating and introducing nitrogen gas into the deposition chamber at flow rate of 10-30 cm3/minute, introducing methane at flow rate of 25-300 cm3/minute, controlling the concentration of methane in the reaction deposition chamber at 1-5% and nitrogen concentration at 0.1-0.5 vol.%, exciting microwave adjustment microwave transmitter power at 100-1000 W, adjusting the pressure to 400-1300 Pa, heating at heating rate of 1-10 degrees C/minute to 400-900 degrees C for 15-60 minutes and cooling to room temperature. USE - The method is useful for preparing nitrogen-doped graphene. ADVANTAGE - The method enables simple and economical preparation of nitrogen-doped graphene with high yield in an environmentally-friendly manner.