• 专利标题:   High dielectric polyimide composite material used for e.g. high-performance embedded capacitors, comprises anhydride monomer and diamine monomer, and doped graphene and nano barium-titanate.
  • 专利号:   CN104211962-A
  • 发明人:   HAN E, QI S, NIU H, WU D, TIAN G, LIU J
  • 专利权人:   UNIV BEIJING CHEM TECHNOLOGY CHANGZHOU
  • 国际专利分类:   C08G073/10, C08J005/18, C08K003/04, C08K003/24, C08L079/08
  • 专利详细信息:   CN104211962-A 17 Dec 2014 C08G-073/10 201513 Pages: 9 Chinese
  • 申请详细信息:   CN104211962-A CN10459609 10 Sep 2014
  • 优先权号:   CN10459609

▎ 摘  要

NOVELTY - A high dielectric polyimide composite material comprises 1.1-1:1 volume ratio of anhydride monomer and diamine monomer, and doped graphene and nano barium-titanate, where concentration of graphene is 0-3 wt.% and nano barium-titanate is 0-20 wt.%. USE - High dielectric polyimide composite material used for high-performance embedded capacitors, printed circuit boards and other microelectronics components. ADVANTAGE - The material has improved mechanical property. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of high dielectric polyimide composite material comprising taking graphene and nano barium-titanate, or graphene, adding organic solvent, ultrasonic dispersing for 4-12 hours, adding diamine monomer, stirring for 10-30 minutes, ice bath cooling, adding anhydride monomer, solvent volatilizing, and carrying out imidization reaction at 135-300 degrees C for 2-6 hours.