• 专利标题:   Nano phonon crystal used for preparing acoustic band-pass/band-stop filter, has gate electrode formed at bottom unit of groove, and vibration layer for covering unit of source/drain electrodes and support column, where vibration layer is adapted to generate resonant vibration.
  • 专利号:   CN113794460-A
  • 发明人:   GUO G, YING Y, SONG X, ZHANG Q, ZHANG Z
  • 专利权人:   UNIV CHINA SCI TECHNOLOGY
  • 国际专利分类:   H03H003/02, H03H009/02
  • 专利详细信息:   CN113794460-A 14 Dec 2021 H03H-009/02 202220 Chinese
  • 申请详细信息:   CN113794460-A CN11096901 17 Sep 2021
  • 优先权号:   CN11096901

▎ 摘  要

NOVELTY - The crystal has a first insulating layer (102) formed on a substrate (101). A second insulating layer (103) is formed on the first insulating layer. A groove (105) is formed on the first insulating layer and the second insulating layer. The groove is formed with multiple supporting columns extending from a bottom unit of the groove. Multiple supporting columns are formed by the first insulating layer and the second insulating layer. A gate electrode (202) is formed at a bottom unit of the groove. A source/drain electrode is formed on the second insulating layer. A vibration layer (401) covers a unit of the source/drain electrodes and a support column (104). The vibration layer is adapted to generate resonant vibration. USE - Nano phonon crystal used for preparing acoustic band-pass/band-stop filter with specific frequency. ADVANTAGE - The crystal stretches and controls energy band on a same nano phonon crystal by covering the vibrating layer on a unit of the source and drain electrode and the supporting column arranged in array in the groove, and forms a non-contact by applying voltage on a grid so as to improve integrated beneficial effect of a device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a nano phonon crystal manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a nano phonon crystal. Substrate (101) First insulating layer (102) Second insulating layer (103) Support column (104) Groove (105) First metal layer (201) Gate electrode (202) Vibration layer (401)