▎ 摘　　要

NOVELTY - This utility new type claims a GaN base one plasma excimer detector, relating to the field of the semiconductor device. From low to up comprise substrate, AlN buffering layer, GaN layer and AlGaN layer, AlGaN layer left side and right side is the source end and drain-end ohm contact metal layer, source end and drain-end ohm contact metal layer and the AlGaN and GaN contact layer, and the AlGaN and GaN layer of a thickness equal and greater than AlGaN layer thickness, middle is graphene, include first, second layer graphene and graphene period type grid Schottky contact layer and the AlGaN layer and the GaN contact layer, first and second graphite layer and is T-shaped, the second graphite layer to graphene period type grid Schottky contact layer; a first graphite layer set with ohmic contact electrode. This utility new type using graphene period type gate structure with metal gate, the terahertz wave transmission and terahertz wave and coupling efficiency of two-dimensional electron gas.