▎ 摘　　要

NOVELTY - The transistor (100) has a semiconductor layer (12) arranged on the substrate layer (11). A source electrode (13) and a drain electrode (14) are respectively arranged at both ends of the semiconductor layer. A dielectric layer (15) is arranged between and overlays the source electrode and the drain electrode. A gate electrode (16) is arranged on the dielectric layer. The semiconductor layer is a two-dimensional ferromagnetic semiconductor material with a single atomic layer. The material of the first substrate (111) is silicon. The material of the second substrate (112) is silicon dioxide. USE - Spin field effect transistor used for magnetic logic devices. ADVANTAGE - The two-dimensional ferromagnetic semiconductor materials have higher magnetoresistance and switching ratio, which makes the performance of magnetic logic devices more excellent. The two-dimensional ferromagnetic semiconductor material used as the conduction channel of spin electrons has an atomic-level material thickness, which has a more sensitive response to the external electric field perpendicular to the plane of the atomic layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of spin field-effect transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a spin field-effect transistor. 11Substrate layer 12Semiconductor layer 13Source electrode 14Drain electrode 15Dielectric layer 16Gate electrode 100Spin-field-effect transistor 111First substrate 112Second substrate