▎ 摘　　要

NOVELTY - The stacked body (1) has substrate (2) made of silicon carbide and having a first main surface (2A) forming predetermined angle with a carbon plane, and a graphene film (3) disposed on first main surface and having an atomic arrangement oriented in relation to atomic arrangement of silicon carbide forming the substrate. The exposed surface (3A) is being a main surface opposite to the substrate, and the regions, each including 10 or more graphene layers and having a circumcircle with a diameter of 5 micrometers or more and 100 micrometers or less. USE - Stacked body for use in electronic device (claimed). ADVANTAGE - Ensures high mobility and stability since the electrode can be formed on the exposed surface. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic cross-sectional view for illustrating the method for manufacturing a FET including graphene film. Stacked body (1) Substrate (2) First main surface (2A) Graphene film (3) Exposed surface (3A) Drain electrode (5) Gate electrode (7)