▎ 摘　　要

NOVELTY - The substrate has an intermediate nanowire layer including several nanowires each with a base portion mounted to a semiconductor wafer, an elongated portion extending away from the wafer, and a tip portion. A buffer layer of aluminum nitride is made integral to the tip portions of the nanowires. An epilayer of semiconductor material is deposited on the buffer layer. The buffer layer has several coalescence boundaries running within the layer and terminating short of a distal face of the layer. A graphene electrode is mounted to the layer. USE - Substrate for use in a semiconductor device i.e. group-ill nitride-based electronic device. Uses include but are not limited to a deep UV (UV) light emitting device, high electron mobility transistors (HEMTs), microelectromechanical systems (MEMS) and surface acoustic wave (SAW) devices. ADVANTAGE - The substrate has a buffer layer of aluminum nitride (AIN) of satisfactory quality, where the low defect density of the buffer layer allows for the deposition of electronic components directly atop the buffer layers or indirectly through multiple epilayer of other group-ill nitride semiconductor materials. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: a method for manufacturing a substrate for a semiconductor device a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a substrate. 10Semiconductor device 12Substrate 14Semiconductor component 15Cladding layer 16Silicon wafer