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  • 专利标题:   Method for transferring graphene thin film for electric component, involves attaching supporting thin film to graphene film formed on substrate, removing substrate, and forming device including thin film attached with graphene film.
  • 专利号:   WO2013154248-A1, KR2013114470-A, KR2015092047-A, KR1584222-B1
  • 发明人:   LEE K, KAHNG Y H, LEE J, LEE B H, LEE K H, LEE J H
  • 专利权人:   GWANGJU INST SCI TECHNOLOGY
  • 国际专利分类:   H01L021/20, H01L021/68, H01L021/205, H01L029/16, H01L051/00, H01L021/677
  • 专利详细信息:   WO2013154248-A1 17 Oct 2013 H01L-021/68 201371 Pages: 23
  • 申请详细信息:   WO2013154248-A1 WOKR010337 30 Nov 2012
  • 优先权号:   KR036884, KR100951

▎ 摘　　要

NOVELTY - Method for transferring graphene thin film involves attaching a supporting thin film to a graphene thin film formed on top of a substrate, removing the substrate, and forming a device including the supporting thin film attached with graphene thin film as a functional layer. USE - Method for transferring graphene thin film for electric component for light emitting device, photoelectric device and thin film transistor (all claimed). ADVANTAGE - The graphene thin film is transferred by simple method. The performance degradation of electric component formed using thin film is suppressed.