• 专利标题:   Vanadium dioxide and graphene based double-control broadband terahertz absorber, has five layers that are arranged, where each layer changes resonance absorption peak number of absorber body by adjusting conductivity of vanadium dioxide.
  • 专利号:   CN113054440-A, CN113054440-B
  • 发明人:   ZHANG B, ZHANG C, ZHONG Z, ZHANG H, LING F
  • 专利权人:   UNIV SICHUAN
  • 国际专利分类:   H01Q015/00, H01Q017/00
  • 专利详细信息:   CN113054440-A 29 Jun 2021 H01Q-015/00 202162 Pages: 8 Chinese
  • 申请详细信息:   CN113054440-A CN10292944 18 Mar 2021
  • 优先权号:   CN10292944

▎ 摘  要

NOVELTY - The absorber has a first layer i.e. vanadium dioxide resonant structure, a second layer i.e. dielectric layer, a third layer i.e. graphene resonant structure, a fourth layer i.e. medium layer, and a fifth layer i.e. metal layer that are arranged when an absorber body has three absorption peaks in working frequency band such that first and second low-frequency resonance absorption peaks are generated by dipole resonance excited by the vanadium dioxide resonance structure and third high-frequency resonance absorption peak is generated by high-order resonance effect excited by the graphene resonant structure. Each layer changes resonance absorption peak number of the absorber body by adjusting conductivity of vanadium dioxide. USE - Vanadium dioxide and graphene based double-control broadband terahertz absorber. ADVANTAGE - The absorber can adjust working bandwidth by adjusting conductivity of the vanadium dioxide or chemical potential energy of graphene so that absorption rate of the absorber body can be adjusted. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a vanadium dioxide and graphene based double-control broadband terahertz absorber.