• 专利标题:   Integrated circuit for remote unit, has interlayer dielectric arranged between back-end-of-line interconnect layers including conductive lines and conductive vias, in which portion of interlayer dielectric comprises graphene alloy.
  • 专利号:   US2018366413-A1, WO2018236667-A1, US10354955-B2
  • 发明人:   LU Y, YANG B, BAO J
  • 专利权人:   QUALCOMM INC, QUALCOMM INC
  • 国际专利分类:   H01L021/02, H01L021/311, H01L021/768, H01L023/522, H01L023/528, H01L023/532, C01B032/182, H01L029/78, H01L021/8234
  • 专利详细信息:   US2018366413-A1 20 Dec 2018 H01L-023/532 201902 Pages: 23 English
  • 申请详细信息:   US2018366413-A1 US687362 25 Aug 2017
  • 优先权号:   US522024P, US687362

▎ 摘  要

NOVELTY - The circuit (600) has a set of back-end-of-line (BEOL) interconnect layers (640, 650, 660 and 670) comprising conductive lines and conductive vias. An interlayer dielectric (ILD) (610) is arranged between the BEOL interconnect layers including the conductive lines and the conductive vias, in which a portion of the ILD comprises a low-K insulating graphene alloy (630), where the low-K insulating graphene alloy comprises fluorographene, oxidized graphene, or hydrogenated graphene. The ILD comprises alternating layers of a low-K dielectric material and the low-K insulating graphene alloy. USE - Integrated circuit for a remote unit. Uses include but are not limited to a mobile phone, a hand-held personal communication systems (PCS) unit, a portable data unit such as personal data assistant, a GPS enabled devices, a navigation device, a set top box, a music player, a video player, an entertainment unit and a fixed location data unit such as meter reading equipment. ADVANTAGE - The circuit improves overall interconnect capacitance by a substantial margin, while improving chip performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing an integrated circuit. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of an integrated circuit device including an ILD between BEOL interconnect layers, in which a portion of the ILD includes a low-K insulating graphene alloy. Integrated circuit (600) ILD (610) Low-K insulating graphene alloy (630) Interconnect layers (640, 650, 660 and 670)