▎ 摘　　要

NOVELTY - The device (100B) has a non-insulator structure formed in a source/drain region or a gate structure. A carbon nano-tube (CNT) (116) is placed over the non-insulator structure. A dielectric layer (109) surrounds the CNT. A graphene-based conductive layer (128) is placed over the CNT. Interspaces between the CNT and other CNTs are filled, where the non-insulator structure comprises metal silicide and the metal silicide and conductive material comprises metal. A catalyst layer (112) is provided between the CNT and the non-insulator structure. USE - Semiconductor device. ADVANTAGE - The CNTs and the graphene-based conductive layer have low resistance, so that conductivity of the device is improved. The device allows liquid to be volatile such that conductive powder is less prone to oxidation damage in the liquid. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a structure illustrating a method for forming a semiconductor device. Semiconductor device (100B) Dielectric layers (109, 122) Catalyst layers (112, 126) CNT (116) Graphene-based conductive layer (128)