• 专利标题:   Integrated chip includes inner connecting through hole extending through inner connecting dielectric layer, directly configured on protective pad layer, and electrically coupled to inner connecting line, where pad layer comprises graphene.
  • 专利号:   CN113555313-A, US2021398898-A1, TW202201520-A, US11309241-B2, US2022238434-A1
  • 发明人:   SUI X, LI M, HUANG X, LU M, ZHAN Y, YANG S, CHAN Y, SHUE S, LEE M, HUANG H, LEE M H
  • 专利权人:   TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD
  • 国际专利分类:   H01L021/768, H01L023/532, H01L023/522, H01L021/304, H01L021/32
  • 专利详细信息:   CN113555313-A 26 Oct 2021 H01L-021/768 202196 Chinese
  • 申请详细信息:   CN113555313-A CN10348142 31 Mar 2021
  • 优先权号:   US908942, US718461

▎ 摘  要

NOVELTY - Integrated chip comprises lower side inner connecting dielectric layer configured on substrate. The inner connecting line is configured on lower side of inner connecting layer. The protective pad layer is directly arranged around outer side wall of inner connection line and upper surface of first inner connection line. The first etching stop layer is arranged directly on upper side of outer surface of first inner connecting connection layer. The second inner connecting through hole is extended through second inner connection through hole, and is electrically connected to inner connection. The protective pad is provided with graphene. The second insulating layer is configured between first insulating line and inner communication line. USE - Integrated chip. ADVANTAGE - The inner connecting line through hole is extended through the second dielectric layer, which is directly configured on the protective pad layer, and electrically coupled to the inner connecting lines, so that the integrated chip can be formed in a simple and cost-effective manner. The integrated chip has improved electrical properties.