▎ 摘　　要

NOVELTY - Designing two-dimensional semiconductor material based on graphene comprises (i) selecting substrate to satisfy the low-dimensional requirements of nano multifunctional semiconductor device, selecting two-dimensional single layer graphene oxide as base material, and selecting graphene oxide without an energy gap as an intercalation material, (ii) forming hexagonal honeycomb structure in the graphene oxide single layer film, (iii) using materials Studio 2019 and VESTA visual structure drawing software to simulate the construction of graphene oxide crystal structure, (iv) inserting layer, and using Vienna Ab initio simulation package (VASP) software program for initial structure optimization, (v) calculating to obtain the best adsorption position of iron, (vi) performing charge transfer between iron and oxygen due to the insertion of iron, and (vii) converting the physical adsorbed iron in graphene oxide into chemical adsorbs, and applying strain to graphene oxide single layer film. USE - The two-dimensional semiconductor material based on graphene is useful in photovoltaic, energy and microelectronic device. ADVANTAGE - The method simplifies iron intercalation graphene oxide film, and realizes effective control of the energy gap. The material has energy gap of 0.45 eV, realizes application of graphene in semiconductor field, and has simple structure, convenient operation, easy processing, controllable energy gap, and very wide application prospect.