▎ 摘　　要

NOVELTY - Synthesizing large area graphene with controllable number of layers by low-temperature chemical vapor deposition of polystyrene comprises taking polystyrene as a solid carbon source, placing on a gas inlet end of a tubular furnace, placing a copper substrate in center of the tubular furnace, heating the polystyrene solid carbon source, growing graphene with controllable number of layers on the surface of the copper substrate by taking hydrogen and argon as a carrier gas, and transferring the graphene thin film onto silicon dioxide/silicon and quartz substrate from the copper substrate. USE - The product is useful in high temperature, high frequency, high power photoelectric devices and anti-radiation electronic devices. ADVANTAGE - The method is economical in comparison with the conventional high temperature CVD process to prepare graphene thin layer. DETAILED DESCRIPTION - Synthesizing large area graphene with controllable number of layers by low-temperature chemical vapor deposition (CVD) of polystyrene comprises taking polystyrene (10-150 mg) as a solid carbon source, placing on a gas inlet end of a tubular furnace, placing a copper substrate in center of the tubular furnace, controlling the temperature of the furnace at 400-700 degrees C, heating the polystyrene solid carbon source, controlling the temperature at 180-280 degrees C, growing graphene with controllable number of layers on the surface of the copper substrate by taking hydrogen and argon as a carrier gas, and transferring the graphene thin film onto silicon dioxide/silicon and quartz substrate from the copper substrate.