▎ 摘　　要

NOVELTY - The structure has a carrier structure with a surface. A protective film layer covers the surface. A carrier plate (22) is arranged on the carrier structure. A patterned coating layer (28) is formed on the carrier plate. The patterned coating layer has different thicknesses. The pattern of the patterned coating layer is symmetrically distributed with respect to the center of the carrier plate. The material for forming the patterned coating layer includes silicon carbide, tantalum carbide, graphite, ceramic, quartz, graphene and diamond film. The material of the carrier plate includes silicon carbide or graphite. The cross-sectional shape of the patterned coating layer includes a rectangle, a trapezoid, an arc or a triangle. The patterned coating layer defines a datum plane and comprises a protrusion portion (30) above the reference plane and a depression portion (31) below the reference plane. USE - Semiconductor wafer carrying structure used in organic metal chemical vapour deposition device (claimed). ADVANTAGE - The problem that the mechanical processing is difficult to finely correct the temperature field distribution of the bearing structure is solved, and the subsequently manufactured light-emitting diode chips have consistent light-emitting wavelength. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an organic metal chemical vapour deposition device. DESCRIPTION OF DRAWING(S) - The drawing shows a top view showing a carrier plate having patterned coating layers with multiple thicknesses. Carrier plate (22) Supporting portion (27) Patterned coating layer (28) Protrusion portion (30) Depression portion (31)