• 专利标题:   Chemical surface-modification of graphene involves dripping reaction solution comprising dibenzoyl peroxide or dilauroyl peroxide as solute and solvent to graphene substrate, drying, supplying inert gas, washing product and drying.
  • 专利号:   CN105731431-A, CN105731431-B
  • 发明人:   GAO B, GAO G, HE M
  • 专利权人:   HARBIN INST TECHNOLOGY, HARBIN INST TECHNOLOGY
  • 国际专利分类:   C01B031/04, C01B032/194
  • 专利详细信息:   CN105731431-A 06 Jul 2016 C01B-031/04 201680 Pages: 12 Chinese
  • 申请详细信息:   CN105731431-A CN10024408 14 Jan 2016
  • 优先权号:   CN10024408

▎ 摘  要

NOVELTY - Chemical surface-modification of graphene involves forming graphene and polymethylmethacrylate films on surface of graphene substrate, immersing in acetone and chlorobenzene and obtaining a graphene-supported substrate, dripping reaction solution to graphene substrate, drying, supplying inert gas, washing product with acetone or ethanol and drying. The reaction solution comprises dibenzoyl peroxid or dilauroyl peroxide as solute, and acetone, ethanol, benzene, chloroform, ether or water as solvent. USE - Chemical surface-modification of graphene (claimed). ADVANTAGE - The method efficiently and economically provides chemically-modified graphene by simple process. DETAILED DESCRIPTION - Chemical surface-modification of graphene involves ultrasonically-cleaning copper foil in 0.1-0.5 mmol/L dilute hydrochloric acid for 2-5 minutes, then cleaning using deionized water for 10-15 minutes and obtaining cleaned copper foil, placing cleaned copper foil in a quartz tube of chemical vapor deposition apparatus, starting vacuum pump, adjusting vacuum inside the quartz tube to pressure of less than 0.1 Pa, introducing hydrogen gas at flow rate of 4 mL/minute and heating system simultaneously, increasing temperature from room temperature to temperature of 1000-1050 degrees C for 5-10 minutes, supplying methane at flow rate of 0.1 mL/minute, continuing reaction at 1000-1050 degrees C for 50 minutes and terminating supply of methane and heating, naturally-cooling to temperature of 200 degrees C, terminating vacuum pump, supplying argon to the quartz tube and removing surface-grown graphene-plated copper foil, analyzing surface of graphene using Raman spectroscopy, spin-coating a layer of 4% polymethylmethacrylate (PMMA)/chlorobenzene solution uniformly spin-coated on surface of the copper foil on which graphene was grown at rotational speed of 2000 rpm using a spin coater at 95-105 degrees C for 15 minutes and obtaining PMMA film-containing copper foil, fixing the film in a fixed device, soaking in 1 mol/L ferric chloride aqueous solution at 85-95 degrees C until the copper foil completely disappears, removing the fixing unit, washing thrice with deionized water, placing graphene on the surface of the graphene substrate, removing the fixture, forming graphene and PMMA films on the surface of the graphene substrate, immersing in acetone at 80 degrees C for 10 minutes, and then immersing in chlorobenzene at 80 degrees C for 10 minutes and obtaining a graphene-supported substrate, dripping 5-20 mmol/L reaction solution to graphene substrate of the graphene-supported substrate in amount of 0.2-0.4 mL/cm2, drying at room temperature, supplying inert gas under protection of solid-phase thermochemical reaction, washing product with acetone or ethanol for 3-5 hours and drying. The reaction solution comprises dibenzoyl peroxide or dilauroyl peroxide as solute, and acetone, ethanol, benzene, chloroform, ether or water as solvent.