▎ 摘　　要

NOVELTY - The method involves providing an epitaxial stack. The epitaxial stack is provided with a gallium nitride channel layer and an aluminum gallium nitride barrier layer. A first aluminum oxide layer is formed on the epitaxial stack. The first aluminum oxide layer is located in a gallium nitride device region. The epitaxial stack is exposed by using thin film transfer technology to form a graphene layer. A source electrode and a drain electrode are contacted to the graphene layer. A gate region of the gallium nitride device and a graphene device are formed, where a gate is located on aluminum oxide layer. USE - Method for manufacturing a heterogeneous integrated structure of a graphene device and a gallium nitride device (claimed). ADVANTAGE - The method enables reducing manufacturing process and manufacturing cost, and improving device quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene device and gallium nitride device heterogeneous integrated structure. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene device and gallium nitride device heterogeneous integrated structure.