▎ 摘　　要

NOVELTY - Preparing a graphene film by plasma enhanced chemical vapor deposition (PECVD) involves: (1) ultrasonically cleaning an insulating substrate with acetone, isopropyl alcohol and deionized water, respectively and drying the substrate with nitrogen; (2) placing the cleaned substrate in a PECVD apparatus, and then introducing a mixed gas of a carbon-containing gas, a hydrogen gas and an inert gas; (3) adjusting a vacuum valve to increase the gas pressure in the PECVD apparatus, increasing the temperature in the PECVD apparatus to a specified temperature, opening the plasma generating source, and gradually depositing the graphene on the insulating substrate material under high experimental pressure; and (4) after the growth time is reached, closing the carbon-containing gas, hydrogen gas, plasma generating source and heating device, naturally cooling the sample in the argon gas flow, and prolonging the deposition time to obtain a graphene film with controllable number of layers. USE - The method is useful for preparing a graphene film by PECVD. ADVANTAGE - The method is capable of preparing the graphene film with high quality and improved carrier mobility.