▎ 摘　　要

NOVELTY - Forming graphene nanomesh, comprises: depositing a metal seed layer (20) on a substrate (10) via physical vapor deposition, where thickness of the metal seed layer is 100-500 nm; and growing a graphene layer (30) on the metal seed layer via chemical vapor deposition, at 700-1000 degrees C, where the graphene layer grows into the graphene nanomesh on the metal seed layer. USE - The method is useful for forming graphene nanomesh on a large area under a direct growth to improve the graphene properties for electronic devices. ADVANTAGE - The method: involves a direct one-step process, hence saves fabrication time and cost and enables large scale production; and enables better distribution and higher concentration of defective regions on the graphene layer to improve sensing characteristics of the graphene and hence improves device performance. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of method of forming graphene nanomesh. Substrate (10) Thin metal seed layer (20) Graphene layer (30) In-situ holes (40) Permanent substrate (50)