▎ 摘　　要

NOVELTY - The method involves preparing a graphene thin film. An Artificial defect part is arranged on the graphene thin film. An anisotropic etching process is carried out on the graphene thin film to form a graphite dilute crystal orientation mark pattern along the artificial defect part. The graphene thin film and the graphene crystal orientation mark pattern are aligned on a target substrate. Photo-etching and oxygen plasma etching processes are performed for patterning the graphene thin film to obtain an edge of graphene. USE - Method for manufacturing an edge of a graphene pattern. ADVANTAGE - The method enables improving performance and application range of a graphene film and simplifying manufacturing process. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for manufacturing an edge of graphene pattern.'(Drawing includes non-English language text)'