▎ 摘　　要

NOVELTY - The method involves putting a graphene sample into a plasma processor vacuum chamber, and pumping the pressure in the chamber to below 1 pascal (Pa). The gas pressure is controlled at 10-300 Pa through a mass flow meter. The plasma processor is turned on. The ignition power is controlled at 0-100 Watt to obtain a processed graphene sample, where the processing time is 0-300 seconds. The processed graphene sample is placed in a Faraday cage and placed in the plasma processor. The background vacuum of the processor is evacuated below 1 Pa, and then the etching gas is introduced. After the etching gas is introduced, the pressure is maintained at 10-200 Pa. The plasma processor is turned on. The ignition power is controlled at 1-50 Watt, where the processing time is 10-180 seconds. The graphene film with nanopores is obtained after processing. USE - Decoupling etching method for introducing nanopores on graphene. ADVANTAGE - The method enables introducing the nano-hole on the graphene with density of 1.3x 1012 cm-2 , and aperture distribution of 0.3-1 nm. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of a decoupling etching method for introducing nanopores on graphene. (Drawing includes non-English language text).