▎ 摘　　要

NOVELTY - The transistor has a substrate layer (1), a channel layer (2), a barrier layer (3), a source electrode (4), a gate electrode (5) and a drain electrode (6) all arranged in sequence from bottom to top. The materials of the channel layer and the barrier layer are group III nitride semiconductors, thus forming a heterojunction structure. A two-dimensional electron gas is formed at the interface of the channel layer and the barrier layer as a conductive channel of the transistor. The substrate layer, the channel layer, the barrier layer, the source electrode, the gate electrode and the drain electrode are all transparent materials in the visible light range. USE - Transparent gallium nitride-based transistor for use in a transparent electronic field. Uses include but are not limited to electronic products, transportation system and solar panel. ADVANTAGE - The transparent gallium nitride-based transistor has high electron mobility, high electron saturation speed, high critical electric field intensity, high speed work, high output power density, high power additional efficiency, high energy conversion efficiency, excellent characteristics, high temperature resistance, radiation resistance and excellent characteristics. The transistor is prepared by selecting the transparent material in the visible light interval, so that the whole light transmittance of the structure is improved, and the feasible preparation method can be applied to the transparent electronic field. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the preparation method of transparent GaN-based transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a transparent GaN-based transistor. 1Substrate layer 2Channel layer 3Barrier layer 4Source electrode 5Gate electrode 6Gate electrode