▎ 摘　　要

NOVELTY - A two-dimensional material structure gating tube comprises a metal electrode layer (M1), a gate layer and a metal electrode layer (M2) which are stacked in sequence. The gate layer includes a two-dimensional material layer (A), a switch layer (B) and an active metal sulfide layer. The two-dimensional material layer (A) and the switch layer (B) are alternately stacked, to form an AB asymmetric structure, a BA asymmetric structure or an ABA symmetric structure. The number of active metal sulfide layer is same as the number of the two-dimensional material layer (A). The active metal sulfide layer is in contact with the side of the two-dimensional material layer (A) away from the switch layer (B). The metal electrode layer (M1 and M2) are inert electrode layers. USE - Two-dimensional material structure gating tube. ADVANTAGE - The two-dimensional material structure gating tube has high stability. The inert electrode layer prevents failure of the gating tube caused by electrode failure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the two-dimensional material structure gating tube.