▎ 摘　　要

NOVELTY - The method involves sticking a graphene layer (33) on a first substrate (10) with semiconductor elements (14) formed. The graphene wires are formed by processing the graphene layer into a wiring pattern. The graphene layer is formed on a second substrate (11). The sticking of the graphene layer has sticking the graphene layer on first substrate with a connection insulating film placed. The first substrate has the semiconductor elements are formed at temperatures of not higher than 400 degrees C. USE - Method for manufacturing semiconductor device. ADVANTAGE - Since the extra amount of the graphene layers are reduced, thus the wiring process of the graphene layers is easily performed is obtained. The rate of the density of defects occurring in a graphene sheet increases, thus increasing the wiring resistance. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device. First substrate (10) Second substrate (11) Semiconductor element (14) Insulating film (20) Graphene layer (33)