▎ 摘　　要

NOVELTY - Method for growing graphene sheets on silicon substrate using plasma-enhanced chemical vapor deposition (PECVD), involves placing silicon substrate in a growth chamber, where the silicon substrate has a growth area of 1-1590 cm2, forming a reduced pressure in the growth chamber, flowing methane gas and hydrogen gas into the growth chamber, where the ratio of methane gas partial pressure to hydrogen gas partial pressure is 3.2-5.5, applying, to the growth chamber, a microwave signal having a power density of 60-80 watts/cm3 to generate a microwave plasma in the growth chamber, where, during generation of the microwave plasma, the silicon substrate has a growth temperature of less than 520 degrees C, forming, in a processing time for less than or equal to 10 minutes, the graphene sheets on the silicon substrate having a frictional coefficient of 0.0055-0.26, and completely covering the silicon substrate with the graphene sheets. USE - The method is useful for growing graphene sheets on silicon substrate. ADVANTAGE - The method provides direct growth of graphene on silicon for better integration of graphene into current semiconductor industry processes.