• 专利标题:   Preparation of nitrogen-doped nickel-vanadium-oxygen electrode material in supercapacitor field, by mixing soluble strong acid salt of nickel with soluble salt containing vanadium and nitrogen-doped graphene and one-step hydrothermal method.
  • 专利号:   CN113149089-A, CN113149089-B
  • 发明人:   GAO Y, LIU Y, XU X, HE J, LI Y, WEI L
  • 专利权人:   UNIV ZHEJIANG TECHNOLOGY
  • 国际专利分类:   C01B032/184, C01B032/194, C01G053/00, H01G011/30, H01G011/86
  • 专利详细信息:   CN113149089-A 23 Jul 2021 C01G-053/00 202178 Pages: 19 Chinese
  • 申请详细信息:   CN113149089-A CN10471725 29 Apr 2021
  • 优先权号:   CN10471725

▎ 摘  要

NOVELTY - A nitrogen-doped nickel-vanadium-oxygen electrode material is prepared by mixing soluble strong acid salt of nickel with soluble salt containing vanadium, nitrogen-doped graphene, polyatomic alcohol type non-ionic surfactant and primary amine organic alkali and preparing by one-step hydrothermal method. USE - The method is used for preparing nitrogen-doped nickel-vanadium-oxygen electrode material in supercapacitor field. ADVANTAGE - The product has new properties through simple heat treatment step, specific capacitance reaching 1122.2 F/g at current density of 1 A/g and 624.8 F/g at 20 A/g, increased specific surface area from 12.2636 m2/g to 256.8145 m2/g, more symmetrical charge-discharge curve area and improved reversibility and coulomb efficiency.