• 专利标题:   Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.
  • 专利号:   US2013243965-A1, JP2013193953-A, KR2013104752-A, KR1348925-B1
  • 发明人:   CHOI J H, JUNG C H, HWANG I T, KANG D W
  • 专利权人:   KOREA HYDRO NUCLEAR POWER CO LTD, KOREA ATOMIC ENERGY RES INST, KOREA ATOMIC ENERGY RES INST, KOREA HYDRO NUCLEAR POWER CO LTD
  • 国际专利分类:   C01B031/04, C01B031/02, H01B013/00, B01J019/08, C23C016/48
  • 专利详细信息:   US2013243965-A1 19 Sep 2013 C01B-031/04 201363 Pages: 12 English
  • 申请详细信息:   US2013243965-A1 US689063 29 Nov 2012
  • 优先权号:   KR026559

▎ 摘  要

NOVELTY - Preparing graphene comprises forming an organic thin film on a substrate, irradiating an upper portion of the organic thin film with radiation to cross-link the organic thin film, and carbonizing the cross-linked organic thin film to form graphene. USE - The method is useful for preparing a conductive material such as graphene (claimed), which is useful for a conductive thin film, a transparent electrode, or a memory device (all claimed), where the graphene is useful: in electric and electronic fields, bio-fields and energy fields such as an ultra-speed transistor, a flexible memory device, a biomimetic device and a solar cell; and for applying organic light emitting device or a non-volatile organic memory device. ADVANTAGE - The method provides graphene with high quality, improved charge mobility, current density characteristics, structure and thermal conductivity, chemical resistance, flexibility, elasticity, applicability, mechanical, thermal and electrical properties in a simple and economical manner.