▎ 摘　　要

NOVELTY - The method involves providing (S110) a semiconductor substrate to form a gallium nitride buffer layer on the semiconductor substrate. A graphene catalyst layer with a first pore structure and a graphene mask layer with a second pore structure are sequentially formed on the gallium nitride buffer layer. A gallium nitride layer is epitaxially grown (S130) on the surface of the graphene mask layer and on the surface of the exposed gallium nitride buffer layer in the pores of the graphene mask layer. USE - Method for preparing gallium nitride thin film. ADVANTAGE - The dislocation density of the gallium nitride thin film grown on the semiconductor substrate is reduced. The low angle grain boundary defects of the contact portion between the gallium nitride epitaxial layer and the graphene mask layer is reduced so that the formed gallium nitride thin film can be uniformly distributed and has a good crystal phase structure. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating a method for producing a gallium nitride thin film. (Drawing includes non-English language text) Step for providing semiconductor substrate is provided to form a gallium nitride buffer layer on a semiconductor substrate (110) Step for forming graphene catalyst layer having a first pore structure and a graphene mask layer having a second pore structure on the gallium nitride buffer layer (120) Step for growing gallium nitride layer on the surface of the graphene mask layer and on the surface of the exposed gallium nitride buffer layer in the pores of the graphene mask layer (130)