• 专利标题:   Metal organic chemical vapor deposition reaction chamber, useful for growing graphene, comprises heating device fixed on bracket, and source inlet and exhaust port that are located at top plate and supporting plate, respectively.
  • 专利号:   CN103590100-A, CN103590100-B
  • 发明人:   WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y
  • 专利权人:   UNIV XIDIAN
  • 国际专利分类:   C30B025/02, C30B025/08
  • 专利详细信息:   CN103590100-A 19 Feb 2014 C30B-025/08 201446 Chinese
  • 申请详细信息:   CN103590100-A CN10646355 03 Dec 2013
  • 优先权号:   CN10646355

▎ 摘  要

NOVELTY - The metal organic chemical vapor deposition reaction chamber comprises an inlet, a top plate, a spray head, a quartz tube, a graphite base, a heating device, an exhaust port, a rotating bracket and a supporting plate. The quartz tube is fixed on an upper part of the supporting plate. The top plate is located in the quartz tube. The rotating bracket is located in a middle of the quartz tube and fixed on the supporting plate. The heating device is fixed on the bracket. The source inlet and an exhaust port are located at the top plate and the supporting plate, respectively. USE - The metal organic chemical vapor deposition reaction chamber is useful for growing graphene (claimed). ADVANTAGE - The reaction chamber has high efficiency, and is capable of growing the graphene with high quality. DETAILED DESCRIPTION - The metal organic chemical vapor deposition reaction chamber comprises an inlet, a top plate, a spray head, a quartz tube, a graphite base, a heating device, an exhaust port, a rotating bracket and a supporting plate. The quartz tube is fixed on an upper part of the supporting plate. The top plate is located in the quartz tube. The rotating bracket is located in a middle of the quartz tube and fixed on the supporting plate. The heating device is fixed on the bracket. The spray head is located in the top plate. The source inlet and an exhaust port are located at the top plate and the supporting plate, respectively. The spray head has an inverted tower-shaped structure to improve an air flow, to reduce a temperature and pressure for air flow distribution in the graphite base, and to accelerate a cooling rate. The heating device utilizes a resistance heating. A resistance wire is uniformly paved on a lower surface of the graphite substrate. The resistance heating avoids dissolution of the metal thin film caused by radio frequency heating. A purge stream of gas is provided between the spray head and the quartz tube to inhibit reaction in a reaction chamber wall surface and to prevent wall contamination. A distance between the inverted tower-shaped structure and the base is 10-15 cm to reduce the volume of the reaction chamber and the air flow rate. Nozzles are uniformly distributed on upper and lower surfaces of the spray head. A height of the spray head is 2-4 cm. The number of nozzles is 20-60. The base has a lower surface with depth of 10-25 mm and an annular groove with a height of 1-4 mm. The purge gas stream unit is uniformly distributed on the quartz tube between a circular cavity and an inner wall of the spray head. The rotating bracket is provided with the graphite substrate, and drives the graphite base, where the rotation speed of the bracket is 100-300 revolution per minute. The exhaust port is connected with the graphite base at a distance of 10-15 cm. The graphite base is at a temperature of 450-1030 degrees C.