▎ 摘　　要

NOVELTY - The structure has a silicon carbide substrate made of silicon carbide single crystal or silicon carbide epitaxial layer, where form of the silicon carbide single crystal is 4-hydrogen-silicon carbide (4H-SiC), 6-hydrogen-silicon carbide (6H-SiC), 3-carbon-silicon carbide (3C-SiC) or rhombohedral-silicon carbide (15R-SiC). A graphene layer forms a single layer or multi-layer structure. A metal forms a single metal layer or two metal composite metal layer, where the metal is Titanium (Ti), Nickel (Ni), Aluminum (Al), Gold (Au), Platinum (Pt), Tantalum (Ta), Tungsten (W), or Chromium (Cr). USE - Silicon carbide ohmic electrode structure. ADVANTAGE - The structure reduces contact resistance and improves stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a silicon carbide ohmic electrode preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a silicon carbide ohmic electrode structure.