• 专利标题:   Preparation of graphene target material used in magnetic control sputtering deposition of low friction carbon film, involves stirring and mixing graphene and ethylene glycol, drying, putting milled copper target base mold, and drying.
  • 专利号:   CN113564525-A, CN113564525-B
  • 发明人:   ZHANG J, JIA Q, ZHANG B
  • 专利权人:   LANZHOU CHEM PHYSICS INST CHINESE ACAD
  • 国际专利分类:   C23C014/35, C23C014/16, C23C014/06
  • 专利详细信息:   CN113564525-A 29 Oct 2021 C23C-014/06 202208 Chinese
  • 申请详细信息:   CN113564525-A CN10844040 26 Jul 2021
  • 优先权号:   CN10844040

▎ 摘  要

NOVELTY - Preparing graphene target material comprises mixing graphene and ethylene glycol, stirring and mixing uniformly, drying to hand to form half-dry state, placing milled copper target base mold, loading pressure is 100-110 MPa, keeping pressure for 1-1.5 hours, drying in vacuum environment to obtain graphene target. USE - Preparation method of graphene target material used in magnetic control sputtering deposition of low friction carbon film. Uses include but are not limited to optical, electrical, mechanical properties, material learning, micro-nano processing, energy, biological medicine and drug delivery. ADVANTAGE - The method provides graphene target with excellent tribology performance and good bonding force, and has stable friction performance in a wide load range. The graphene target can directly compound the graphene to the hydrogen-free carbon film, thus obtaining pure carbon film.