• 专利标题:   Preparation of continuous single layer graphene on insulating substrate by providing insulating substrate, depositing germanium film on insulating substrate, using germanium film as catalyst and growing graphene at high temperature.
  • 专利号:   CN106904600-A, CN106904600-B
  • 发明人:   DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN106904600-A 30 Jun 2017 C01B-032/186 201755 Pages: 9 Chinese
  • 申请详细信息:   CN106904600-A CN10952655 17 Dec 2015
  • 优先权号:   CN10952655

▎ 摘  要

NOVELTY - Preparation of continuous single layer graphene on an insulating substrate comprises providing an insulating substrate, depositing germanium film on the insulating substrate, using germanium film as catalyst, growing graphene at high temperature, continuously evaporating germanium film at high temperature, and completely removing to obtain continuous graphene bonded on the insulating substrate. USE - Preparation of continuous single layer graphene on an insulating substrate (claimed). ADVANTAGE - The method is simple and provides product with improved quality and performance.