▎ 摘　　要

NOVELTY - The graphene transistor comprises: a source electrode (100); a drain electrode (102); a graphene layer (104) disposed between the source electrode and the drain electrode; an insulating layer (106); a gate electrode (108) separated from the graphene layer, the source electrode and the drain electrode by the insulating layer; and two doping layers disposed on the graphene layer or beneath the graphene layer for providing dopants for the graphene layer. The doping layer comprises nonstoichiometric compounds. The doping layer is formed by a titanium oxide (TiOx) film. USE - The graphene transistor is useful as a bottom-gate transistor and a top-gate transistor (all claimed). ADVANTAGE - The graphene transistor exhibits high air stability due to the presence of the nonstoichiometric compounds in the doping layer and high carrier mobility, and is not easily affected by air and vapor in the environment. DETAILED DESCRIPTION - The graphene transistor comprises: a source electrode (100); a drain electrode (102); a graphene layer (104) disposed between the source electrode and the drain electrode; an insulating layer (106); a gate electrode (108) separated from the graphene layer, the source electrode and the drain electrode by the insulating layer; and two doping layers disposed on the graphene layer or beneath the graphene layer for providing dopants for the graphene layer. The doping layer comprises nonstoichiometric compounds. The doping layer is formed by a titanium oxide (TiOx) film. The doping layers are disposed on the graphene layer and cover the whole graphene layer or only cover a part of the graphene layer. The doping layer has a thickness of 10-50 nm. DESCRIPTION OF DRAWING(S) - The figure shows a schematic perspective view of a graphene transistor. Source electrode (100) Drain electrode (102) Graphene layer (104) Insulating layer (106) Gate electrode. (108)