• 专利标题:   Manufacture of hexagonal boron nitride film used for graphene optoelectronic device, involves carrying out physical vapor deposition of boron atoms from solid boron source on substrate.
  • 专利号:   CN103031516-A, CN103031516-B
  • 发明人:   CHEN H, XU M
  • 专利权人:   UNIV ZHEJIANG
  • 国际专利分类:   C23C014/06, C23C014/54
  • 专利详细信息:   CN103031516-A 10 Apr 2013 C23C-014/06 201363 Pages: 10 Chinese
  • 申请详细信息:   CN103031516-A CN10019912 18 Jan 2013
  • 优先权号:   CN10019912

▎ 摘  要

NOVELTY - Physical vapor deposition of boron atoms from solid boron source is carried out on a substrate to form hexagonal phase boron nitride film. The deposition rate is 0.01-20 nm/minute. The substrate temperature is controlled at 20-1600 degrees C and temperature is reduced to room temperature at a rate of 10-400 degrees C/minute. USE - Hexagonal phase boron nitride film used for improving performance of graphene optoelectronic device. ADVANTAGE - The hexagonal phase boron nitride film having excellent flatness and insulating property is manufactured with high safety by a simple and easy process.